机译:超浅结构的光电压与微探针薄层电阻测量
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium and Instituut voor Kern-en Stralingsfysika, K. U. Leuven, Celestijnenlaan 200D, B-3001 Leuven, Belgium;
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium;
Fraunhofer IISB, Schottkystrasse 10, D-91058 Erlangen, Germany;
Fraunhofer IISB, Schottkystrasse 10, D-91058 Erlangen, Germany;
Capres A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby, Denmark;
Capres A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby, Denmark;
Capres A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby, Denmark;
Department of Micro- and Nanotechnology, DTU Nanotech, Technical University of Denmark, Building 345 East, DK-2800 Kgs. Lyngby, Denmark and Capres A/S, Scion-DTU, Building 373, DK-2800 Kongens Lyngby, Denmark;
机译:先进的互补金属氧化物半导体基于结光电压的薄层电阻测量的见解
机译:晕环注入对超浅p-n结泄漏电流和薄层电阻的影响
机译:低于50 nm栅极长度晶体管的超浅结的定量分析:结深度,薄层电阻,短沟道效应和晶体管性能
机译:评估铜镶嵌互连的薄层电阻和线宽的测试结构所涉及的问题
机译:多点航天器测量的磁尾电流片结构和动力学。
机译:HIV融合肽13Co至脂质31P近距离的固态核磁共振测量支持α螺旋和β肽结构的类似部分插入的膜位置
机译:超低结构上的光电压与微探针薄层电阻测量
机译:双片结构在速度下的抗穿透性为8.8 Km / sec