机译:量子点红外光电探测器中增强的法向入射光电流
Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;
Department of Electrical and Computer Engineering, Tufts University, 161 College Ave., Medford,Massachusetts 02155;
Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;
Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;
Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;
Center for High Technology Materials, ECE Department, University of New Mexico, 1313 Goddard St. SE,Albuquerque, New Mexico 87106;
机译:量子点红外光电探测器的法向入射光电流增加
机译:量子点红外光电探测器的法向入射光电流增加
机译:AlGaN / GaN量子阱红外光电探测器中的正常入射中红外光电流
机译:Si掺杂对正常入射LNA / Ln_(0.15)Ga_(0.85)的影响,如孔型量子点红外光电探测器
机译:新型多色量子阱红外光电探测器和高级量子点红外光电探测器的研究。
机译:量子点的形状和应变分布对量子点红外光电探测器光学跃迁的影响
机译:井中横向量子点中光电流的起源