首页> 外文期刊>Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures >Electron beam direct write of chalcogenide glass integrated optics
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Electron beam direct write of chalcogenide glass integrated optics

机译:硫族化物玻璃集成光学元件的电子束直接写入

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摘要

The authors present experimental results of electron beam driven structuring of GexSe1-x glass films with composition (x ∼ 0.2) that lies very close to the floppy to rigid stiffness transition for the purpose of achieving planar ridge optical waveguides. Chalcogenide thin films were deposited by pulsed laser deposition and spin-coating on thermally oxidized silicon substrates. The height and width of the induced deformations tend to increase with slower beam scan rates, greater number of exposures, larger beam currents, and thicker GexSe1-x films. Deformations greater than three times the original film thickness were obtained. Numerical analysis shows that guided wave optical modes are supported. Fabricated directional coupler, ring resonator, and grating structures are promising advances toward realizing planar lightwave devices by direct writing with an electron beam.
机译:作者提出了电子束驱动的GexSe1-x玻璃膜的实验结果,其组成(x〜0.2)非常接近软盘到刚性刚度的过渡,以实现平面脊形光波导。通过脉冲激光沉积和旋涂在热氧化的硅基板上沉积硫属化物薄膜。随着光束扫描速度的降低,曝光次数的增加,光束电流的增加以及GexSe1-x膜的厚度增加,诱发变形的高度和宽度趋于增加。获得的变形大于原始膜厚度的三倍。数值分析表明,可以支持导波光学模式。预制的定向耦合器,环形谐振器和光栅结构有望通过直接写入电子束实现平面光波器件。

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