Photoluminescence properties of self-assembled inAs quantum dots grown on InP substrates by solid source molecular beam epitaxy

摘要

Self-organized InAs quantum dots (QDS) with different deposition grown on an InP (100) substrate were prepared by solid source molecular beam epitaxy at different temperatures. Photoluminescence (PL) measurements are used to investigated optical properties of the QDs. It is observed that the PL emissions of QDs with 10 A InAs deposition exhibit multiple peaks. Besides emission from the QDs at lower energy, two or three additional peaks are observed.