High reflectivity symmetrically strained Zn_xCd_yMg_1-x-ySe-based distributed Bragg reflectors for current injection devices

摘要

Distributied Bragg reflectors (DBRs) with different numbers of periods were grown by molecular beam epitaxy from Zn_xCd_yMg_1-x-ySe-based materials on InP substrates. The alternating ZnCdSe/ ZnCdMgSe layers were symmetrically strained to the InP substrate greatly simplifying the growth Process and increasing the unformaity. High crystalline quality was also achieved in these structures.