Electrical characteristics of (pb, Sr) TiO_3 thin fiolms for films for ulta-large-scale- integrated dynamic random access memory capacitors prepared by liquid-source misted chemical deposition

摘要

For the first tie, the physical and electrical properties of lead-strontium-titanate (PST) thin films were prepared by liquid-source misted chemical deposition, and are reported. PST thin films were deposited on a platinum-coated Si wafer. Pb acetate, Sr acetate, and Ti isoproxide were use as metallic precursors. These were dissolved in 2-methoxyethnol. A fine mist of metallic precursor solution was carried into a deposition chamber by Ar carrier gas.