'p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

摘要

Si inteband tunnel diodes have been successfully fabricated by molecular beam epitaxy and rom temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n-and p-type δ-doped injectors separated by an intrinsic Si spacer. A "p-on-n" configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-tpe dopant, to produce sharp delta-doped profifles adjacent to the intrinsic Si space.