True-blue laser diodes with tunnel junctions grown monolithically by plasma-assisted molecular beam epitaxy

摘要

We demonstrate true-blue 450 nm tunnel junction (TJ) laser diodes (LDs) grown by plasma-assisted molecular beam epitaxy (PAMBE). The absence of hydrogen during PAMBE growth allows us to achieve TJs with low resistance. We compare TJ LDs with LDs of standard construction with p-type metal contact. For both types of LD, the threshold current density is around 3 kA/cm(2) and the slope efficiency is 0.5W/A. We do not observe any significant changes in optical losses and differential gain in TJ LDs compared with standard LDs. The differential resistivity of the TJs for current densities higher than 2 kA/cm(2) is below 10(-4)Omega.cm(2). (c) 2018 The Japan Society of Applied Physics