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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena >Analysis of the field-electron energy distribution from amorphous carbon-nitride films
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Analysis of the field-electron energy distribution from amorphous carbon-nitride films

机译:非晶碳氮化物膜的场电子能分布分析

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The study of field-electron energy distribution (FEED) from amorphous carbon-nitride (a-CN) films is essential to understanding the mechanism of field emission from this promising material. In this work, the FEED from an a-CN film was obtained by measuring the distribution of electrons field-emitted from individual emitting sites. The FEED are recorded at different electrical fields. We found that the peak shifts as well as the half-widths increase with increasing applied fields. Furthermore, multipeak features are observed at the low-energy side of the spectra. The FEED data are fitted by using a theoretical energy distribution of free-electron approximation. We assumed that the small peaks originate from the interband states of a-CN film. We propose that although the emission mainly originates from current injection into the conduction band of a-CN film, the electrons may also be emitted from interband states.
机译:研究非晶碳氮化物(a-CN)薄膜的场电子能量分布(FEED)对于了解这种有前途的材料的场发射机理至关重要。在这项工作中,通过测量从各个发射点场发射的电子的分布,可以得到a-CN膜的FEED。 FEED记录在不同的电场下。我们发现,峰值偏移以及半峰宽度随施加电场的增加而增加。此外,在光谱的低能量侧观察到多峰特征。 FEED数据通过使用自由电子近似的理论能量分布进行拟合。我们假设这些小峰源自a-CN薄膜的带间状态。我们提出,尽管发射主要来自电流注入到a-CN薄膜的导带中,但电子也可能从带间态发射出去。

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