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首页> 外文期刊>Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures >Fabrication of ultrathin (~100 nm), low-index nanoporous silica films for photonic devices: Role of substrate adhesion on the film thickness
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Fabrication of ultrathin (~100 nm), low-index nanoporous silica films for photonic devices: Role of substrate adhesion on the film thickness

机译:用于光子器件的超薄(〜100 nm)低折射率纳米多孔二氧化硅薄膜的制备:基材粘附力对薄膜厚度的作用

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摘要

Low refractive index, nanoporous silica films can enhance the reflectivity of multilayer omnidirectional reflectors by decreasing the refractive index of the low-index layer below that of dense silicon dioxide (~1.458) or even of magnesium fluoride (~1.4). Precise thickness and refractive index control of the low-index dielectric layer are required to achieve maximum benefit. In this article, we demonstrate successful processing and integration of quarter wavelength nanoporous silica films (105 nm thick, refractive index ~1.24 at 632.8 nm) for applications in omnidirectional reflectors. The low-index film's thickness was found to depend strongly on the choice of underlying substrate and for identical processing conditions, the film thickness decreased in the order Si > GaAs > GaSb. The thickness variation on these substrates was related to liquid-solid adhesion during spin coating and final film thicknesses were well correlated with the contact angle and spreading coefficient for the sol on the substrate. Two different models were evaluated to simulate the dependence of film thickness on the underlying substrate. The spin coating model proposed by Yanagisawa [J. Appl. Phys. 61, 1035 (1987)] introduces liquid slip at the solid-liquid interface and the model of [Adrienko et ah, J. Chem. Phys. 119, 13106 (2000)] proposes the formation of an interfacial vapor layer that provides an effective slip at the interface. Calculated film thickness values using both models agree well with those obtained from the experiments.
机译:低折射率的纳米多孔二氧化硅膜可通过将低折射率层的折射率降低到致密二氧化硅(〜1.458)甚至氟化镁(〜1.4)以下来提高多层全向反射器的反射率。需要低折射率介电层的精确厚度和折射率控制以实现最大利益。在本文中,我们演示了用于全向反射器的四分之一波长纳米多孔二氧化硅膜(105 nm厚,在632.8 nm处的折射率〜1.24)的成功加工和集成。发现低折射率膜的厚度在很大程度上取决于下层基板的选择,并且对于相同的处理条件,膜厚度的减小顺序为Si> GaAs> GaSb。这些基材上的厚度变化与旋涂期间的液固粘附性有关,最终膜的厚度与溶胶在基材上的接触角和铺展系数密切相关。评估了两个不同的模型以模拟薄膜厚度对下层基材的依赖性。柳泽提出的旋涂模型[J.应用物理61,1035(1987)]在固-液界面引入了液滑和[Adrienko等人,J.Chem.Soc.Chem。,1987,48,1959]。物理[J.Am.Chem.Soc.119,13106(2000)]提出了形成界面蒸气层的界面蒸气层,该界面蒸气层在界面处提供有效的滑动。使用这两种模型计算的膜厚值与从实验中获得的值非常吻合。

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