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首页> 外文期刊>Journal of University of Science and Technology Beijing >Preparation of Bi_(2-x)Sb_xTe_3 thermoelectric films by electrodeposition
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Preparation of Bi_(2-x)Sb_xTe_3 thermoelectric films by electrodeposition

机译:电沉积制备Bi_(2-x)Sb_xTe_3热电薄膜

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摘要

Bi_(2-x)Sb_xTe_3 thermoelectric films were electrochemically deposited from the solution containing Bi~(3+), HTeO_2~+ and SbO~+. ESEM (environmental scanning electron microscope) investigations indicated that the crystalline state of Bi_(2-x)Sb_xTe_3 films transformed from equiaxed crystal to dendritic crystal with the negative shift of deposition potential. XRD and EDS were used to characterize the structure and composition of the electrodeposited films. The Seebeck coefficient and the temperature dependence of the resistance of Bi_(2-x)Sb_xTe_3 films were measured. The results showed that the composition of the film electrodeposited at -0.5 V is Bi_(0.5)Sb_(1.5)Te_3 with the largest Seebeck coefficient of 213 mu V centre dot K~(-1).
机译:从含有Bi〜(3 +),HTeO_2〜+和SbO〜+的溶液中电化学沉积Bi_(2-x)Sb_xTe_3热电薄膜。 ESEM(环境扫描电子显微镜)研究表明,Bi_(2-x)Sb_xTe_3薄膜的晶体状态从等轴晶体转变为树枝状晶体,且沉积电位为负。 XRD和EDS用于表征电沉积膜的结构和组成。测量了Bi_(2-x)Sb_xTe_3薄膜的塞贝克系数和电阻的温度依赖性。结果表明,在-0.5 V下电沉积的薄膜的成分为Bi_(0.5)Sb_(1.5)Te_3,最大塞贝克系数为213μV中心点K〜(-1)。

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