Thermoelectric power (TEP) of layered chalcogenides GaTe crystals

摘要

TEP measurements of gallium mono-tellurite single crystals have been studied over the temperature range 193–583 K. GaTe single crystals grown from melt by the modified Bridgman technique method. The results of measurements indicate that the investigated samples turned out to be P-type nature. Investigation of GaTe compound revealed that it has interesting properties. Many physical parameters were determined such as carrier mobilities, effective masses of free charge carriers, diffusion coefficient and diffusion length as well as the relaxation time. The highest value of figure of merit for GaTe permit the practical application as thermoelectric element.