A microbeam bending method for studying stress-strain relations for metal thin films on silicon substrates

摘要

We have developed a microbeam bending technique for determining elastic-plastic, stress-strain relations for thin metal films on silicon substrates. The method is similar to previous microbeam bending techniques, except that triangular silicon microbeams are used in place of rectangular beams. The triangular beam has the advantage that the entire film on the top surface of the beam is subjected to a uniform state of plane strain as the beam is deflected, unlike the standard rectangular geometry where the bending is concentrated at the support. To extract the average stress-strain relations for the film, we present a method of analysis that requires computation of the neutral plane for bending, which changes as the film deforms plastically. This method can be used to determine the elastic-plastic properties of thin metal films on silicon substrates up to strains of about 1 %. Utilizing this technique, both yielding and strain hardening of Cu thin films on silicon substrates have been investigated. Copper films with dual crystallographic textures and different grain sizes, as well as others with strong < 111 > textures have been studied. Three strongly textured < 111 > films were studied to examine the effect of film thickness on the deformation properties of the film. These films show very high rates of work hardening, and an increase in the yield stress and work hardening rate with decreasing film thickness, consistent with current dislocation models.