机译:钝化膜在爬升辅助位错滑移下的拉伸响应
Department of Mechanical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands;
Department of Mechanical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands,Department of Engineering, Cambridge University, Trumpington Street, Cambridge CB2 1PZ, UK;
Department of Mechanical Engineering, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands;
dislocations; mechanical properties; thin films; high temperature; size effects;
机译:平面应变离散位错塑性与位错的爬升辅助滑移运动
机译:回应“关于硅掺杂对GaN薄膜中位错运动和拉伸应力影响的评论” [J.应用物理109,073509(2011)]
机译:低能电子束辐照引起的横向过长生长GaN薄膜中的位错滑移
机译:在双相TI-48AT中观察<2C + A>位错滑动。%Al室温拉伸变形
机译:对常规兼柔性基材生长的外延薄膜放松动力学的观察:界面附近的位错滑动的连续模拟
机译:SEM和电子通道对比度成像中的原位宏观拉伸测试:块状β-Ti21S多晶中的铅笔滑行
机译:超薄金属薄膜中位错的滑移和爬升
机译:EBIC(电子束感应电流)对比清洁,装饰和氘钝化的si(Ge)外延失配位错。