High Electron Mobility in Solution-Cast and Vapor-Deposited Phenacyl-Quaterthiophene-Based Field-Effect Transistors:Toward N-Type Polythiophenes

摘要

Realization of practical organic electronics has been impaired by the paucity of high-mobility,solution-processable,electron-transporting (n-type) semiconductors for organic field-effect transistors (OFETs).The combination of such materials with hole transporters (p-type)should enable inexpensive,high-throughput organic CMOS fabrication via spin-coating,drop-casting,and/or printing.There are two primary challenges to achieving such properties:(i) obtaining favorable crystal packing while maintaining useful solubility,and (ii) achieving n-type transport via appropriate molecular electronic structure/orbital energetics and low-defect density films.