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Controlling the growth of single crystalline nanoribbons of copper tetracyanoquinodimethane for the fabrication of devices and device arrays

机译:控制用于制造器件和器件阵列的四氰基喹二甲烷铜的单晶纳米带的生长

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摘要

In this paper, (1) a simple and controllable method to synthesize single crystalline nanoribbons of CuTCNQ in a large area was demonstrated by using a physical and chemical vapor combined deposition technique. (2) Nanoribbons synthesized by this method were identified to belong to phase I. (3) Devices and device arrays of nanoribbons were in situ fabricated by this method using gap electrodes and gap electrode arrays. (4) Current-voltage characteristics of crystalline devices and device arrays of nanoribbons exhibited semiconductor properties, and this conclusion was further confirmed by the results of devices based on an individual nanoribbon or microribbon of CuTCNQ (phase I). The controllable synthesis of nanoribbons for the in situ fabrication of crystalline nanodevices and device arrays will be attractive for nanoelectronics. Moreover, semiconductor current-voltage characteristics of the nanoribbons will be beneficial to the understanding of CuTCNQ.
机译:在本文中,(1)通过使用物理和化学气相结合沉积技术,证明了一种简单且可控的大面积合成CuTCNQ单晶纳米带的方法。 (2)通过该方法合成的纳米带被鉴定为属于相I。(3)使用间隙电极和间隙电极阵列通过该方法原位制造纳米带的器件和器件阵列。 (4)晶体器件和纳米带器件阵列的电流-电压特性表现出半导体特性,这一结论进一步被基于CuTCNQ(第一阶段)的单个纳米带或微带的器件的结果所证实。用于晶体纳米器件和器件阵列的原位制造的纳米带的可控制合成对于纳米电子学将是有吸引力的。此外,纳米带的半导体电流-电压特性将有助于理解CuTCNQ。

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