首页> 外文期刊>Journal of the American Chemical Society >n-Channel Polymers by Design: Optimizing the Interplay of Solubilizing Substituents, Crystal Packing, and Field-Effect Transistor Characteristics in Polymeric Bithiophene-lmide Semiconductors
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n-Channel Polymers by Design: Optimizing the Interplay of Solubilizing Substituents, Crystal Packing, and Field-Effect Transistor Characteristics in Polymeric Bithiophene-lmide Semiconductors

机译:n通道聚合物的设计:优化聚合物联噻吩-酰亚胺半导体中的可溶取代基,晶体堆积和场效应晶体管特性之间的相互作用

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Electron transporting (n-channel) polymer semiconductors for fieid-effect transistors are rare. In this investigation, the synthesis and characterization of new electron-depleted N-alkyl-2,2'-bithiophene-3,3'-dicarboximide-based π-conjugated homopolymers and copolymers containing the 2,2'-bithiophene unit are reported. A novel design approach is employed using computational modeling to identify favorable monomer properties such as core ptanarity, solubilizing substituent tailorability, and appropriate electron affinity with gratifying results. Monomeric model compounds are synthesized to confirm these properties, and a crystal structure reveals a short 3.43 A π-π stacking distance with favorable solubilizing substituent orientations. A family of 10 homopolymers and bithiophene copolymers is then synthesized via Yamamoto and Stille polymerizations, respectively. Two of these polymers are processable in common organic solvents: the homopolymer poly(N-(2-octyldodecyl)-2,2'-bithiophene-3,3'-dicarboximide) (P1) exhibits n-channel FET activity, and the copolymer poly(N-(2-octyldodecyl)-2,2':5',2":5",2'"-quaterthiophene-3,3'-dicarboximide) (P2) exhibits air-stable p-channel FET operation. After annealing, P1 films exhibit a very high degree of crystallinity and an electron mobility > 0.01 cm~2 V~(-1) s~(-1) with a current on-off ratio of 10~7, which is remarkably independent of film-deposition conditions. Extraordinarily, P1 films also exhibit terracing in AFM images with a step height matching the X-ray diffraction d spacing, a rare phenomenon for polymeric organic semiconductors. Another fascinating property of these materials is the air-stable p-channel FET performance of annealed P2 films, which exhibit a hole mobility of ~0.01 cm~2 V~(-1) s~(-1) and a current on-off ratio of 10~7.
机译:用于电场效应晶体管的电子传输(n沟道)聚合物半导体很少见。在该研究中,报道了新的贫电子的N-烷基-2,2'-联噻吩-3,3'-二甲叉酰亚胺基π-共轭均聚物和含有2,2'-联噻吩单元的共聚物的合成和表征。使用一种新颖的设计方法,通过计算模型来确定有利的单体性能,例如核心的可塑性,可溶的取代基可调节性以及合适的电子亲和力,并获得令人满意的结果。合成了单体模型化合物以证实这些性质,并且晶体结构显示出短的3.43 Aπ-π堆积距离以及良好的增溶取代基取向。然后分别通过Yamamoto和Stille聚合合成10种均聚物和联噻吩共聚物。这些聚合物中的两种可在常见的有机溶剂中加工:均聚物聚(N-(2-辛基十二烷基)-2,2'-联噻吩-3,3'-二甲酰亚胺)(P1)具有n沟道FET活性,而共聚物聚(N-(2-辛基十二烷基)-2,2':5',2“:5”,2'“-四噻吩-3,3'-二甲酰亚胺)(P2)显示出稳定的p沟道FET操作。退火后,P1薄膜具有很高的结晶度,电子迁移率> 0.01 cm〜2 V〜(-1)s〜(-1),电流开/关比为10〜7,与尤其是,P1膜在AFM图像中也显示出梯级,其台阶高度与X射线衍射d间隔相匹配,这在高分子有机半导体中是罕见的现象,这些材料的另一个令人着迷的特性是空气稳定的p沟道退火后的P2薄膜的FET性能,其空穴迁移率为〜0.01 cm〜2 V〜(-1)s〜(-1),电流开/关比为10〜7。

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