首页> 外文期刊>Journal of the American Chemical Society >Scan-Rate-Dependent Current Rectification of Cone-Shaped Silica Nanopores in Quartz Nanopipettes
【24h】

Scan-Rate-Dependent Current Rectification of Cone-Shaped Silica Nanopores in Quartz Nanopipettes

机译:石英纳米移液管中圆锥形二氧化硅纳米孔的扫描速率依赖性电流整流。

获取原文
获取原文并翻译 | 示例
       

摘要

Here we report the voltammetric behavior of cone-shaped silica nanopores in quartz nanopipettes in aqueous solutions as a function of the scan rate, v. Current rectification behavior for silica nanopores with diameters in the range 4-25 nm was studied. The rectification behavior was found to be strongly dependent on the scan rate. At low scan rates (e.g., v < 1 V/s), the rectification ratio was found to be at its maximum and relatively independent of v. At high scan rates (e.g., v > 200 V/s), a nearly linear current-voltage response was obtained. In addition, the initial voltage was shown to play a critical role in the current-voltage response of cone-shaped nanopores at high scan rates. We explain this v-dependent current-voltage response by ionic redistribution in the vicinity of the nanopore mouth.
机译:在这里,我们报告了在水溶液中石英纳米移液器中锥形二氧化硅纳米孔的伏安行为与扫描速率v的关系。研究了直径在4-25 nm范围内的二氧化硅纳米孔的电流整流行为。发现整流行为在很大程度上取决于扫描速率。在低扫描速率(例如,v <1 V / s)下,发现整流比达到最大值,并且与v相对独立。在高扫描速率(例如,v> 200 V / s)下,电流接近线性-电压响应被获得。另外,初始电压在高扫描速率下在锥形纳米孔的电流-电压响应中起着至关重要的作用。我们通过离子在纳米孔口附近的重新分布来解释这种v依赖的电流-电压响应。

著录项

  • 来源
    《Journal of the American Chemical Society》 |2010年第48期|p.17088-17091|共4页
  • 作者

    Joshua P. Guerrette; Bo Zhang;

  • 作者单位

    Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States;

    Department of Chemistry, University of Washington, Seattle, Washington 98195-1700, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

  • 入库时间 2022-08-18 03:15:57

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号