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Conductance of Single Cobalt Chalcogenide Cluster Junctions

机译:单钴硫族化物簇结的电导

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Understanding the electrical properties of semiconducting quantum dot devices have been limited due to the variability of their size/composition and the chemistry of ligand/electrode binding. Furthermore, to probe their electrical conduction properties and its dependence on ligand/electrode binding, measurements must be carried out at the single dot/cluster level. Herein we report scanning tunneling microscope based break junction measurements of cobalt chalcogenide dusters with Te, Se and S to probe the conductance properties. Our measured conductance trends show that the Co-Te based clusters have the highest conductance while the Co-S clusters the lowest. These trends are in very good agreement with cyclic voltammetry measurements of the first oxidation potentials and with density functional theory calculations of their HOMO-LUMO gaps.
机译:由于半导体量子点器件的尺寸/组成以及配体/电极结合的化学性质的差异,对半导体量子点器件的电学性质的了解受到限制。此外,为了探测其导电特性及其对配体/电极结合的依赖性,必须在单个点/簇水平上进行测量。本文中,我们报告了基于扫描隧道显微镜的硫族钴粉尘与Te,Se和S的折断连接测量,以探测电导特性。我们测得的电导趋势表明,基于Co-Te的簇具有最高的电导率,而基于Co-S的簇则具有最低的电导率。这些趋势与第一氧化电位的循环伏安法测量及其HOMO-LUMO间隙的密度泛函理论计算非常吻合。

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