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Two-Dimensional π-Expanded Quinoidal Terthiophenes Terminated with Dicyanomethylenes as n-Type Semiconductors for High-Performance Organic Thin-Film Transistors

机译:以氰基亚甲基封端的二维π扩展喹诺酮类噻吩作为高性能有机薄膜晶体管的n型半导体

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摘要

Quinoidal oligothiophenes (QOT), as classical n-type semiconductors, have been well-known for a long time but with non-optimal semiconducting properties. We report here the design and selective synthesis of new two-dimensional (2D) π-expanded quinoidal terthiophenes, 2DQTTs, with proximal (2DQTT-i) and distal (2DQTT-o) regiochemistry for high-performance n-channel organic thin-film transistors (n-OTFTs) featuring high electron mobility, solution processability, and ambient stability. The elegant combination of thieno[3,4-b]thiophene [TT, donor (D)] and 5-alkyl-4H- thieno[3,4-c]pyrrole-4,6(5H)-dione [TPD, acceptor (A)] units with relatively large π-surface endows these 2DQTTs with distinctive 2D structural characteristics and flat configuration stabilized by weak intramolecular S-O/S weak interactions. Furthermore, the A-D-A-D-A electronic structure maintains an adequately low LUMO energy level. These 2DQTTs are shown to exhibit outstanding semiconducting properties with electron mobilities of up to 3.0 cm~2 V~(-1) s~(-1) and on/off ratios of up to 10~6 (2DQTT-o) in ambient- and solution-processed OTFTs. Investigations on thin-film morphology reveal that the microstructure of 2DQTTs is highly dependent on the orientation of the fused thiophene subunits, leading to differences in electron mobilities of 1 order of magnitude. X-ray diffraction studies in particular reveal increased crystallinity, crystalline coherence, and orientational order in 2DQTT-o compared to 2DQTT-i, which accounts for the superior electron transport property of 2DQTT-o.
机译:作为经典的n型半导体,喹诺酮类低聚噻吩(QOT)长期以来广为人知,但具有非最佳的半导体性能。我们在这里报告新的二维(2D)π扩展的喹诺酮对噻吩,2DQTTs的设计和选择性合成,其中近端(2DQTT-i)和远端(2DQTT-o)区域化学用于高性能n通道有机薄膜具有高电子迁移率,溶液可加工性和环境稳定性的三极管(n-OTFT)。噻吩并[3,4-b]噻吩[TT,供体(D)]和5-烷基-4H-噻吩并[3,4-c]吡咯-4,6(5H)-二酮[TPD,受体]的完美结合(A)]具有较大π表面的单元赋予这些2DQTT具有独特的2D结构特征和平坦构型,并通过弱分子内SO / S弱相互作用使其稳定。此外,A-D-A-D-A电子结构保持足够低的LUMO能级。这些2DQTTs具有出色的半导体性能,在环境温度下电子迁移率高达3.0 cm〜2 V〜(-1)s〜(-1),开/关比高达10〜6(2DQTT-o)。和溶液处理的OTFT。薄膜形态的研究表明2DQTTs的微观结构高度依赖于熔融噻吩亚基的取向,导致电子迁移率的差异为1个数量级。与2DQTT-i相比,特别是X射线衍射研究显示2DQTT-o具有更高的结晶度,晶体相干性和取向顺序,这说明了2DQTT-o具有出色的电子传输性能。

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  • 来源
    《Journal of the American Chemical Society》 |2014年第46期|16176-16184|共9页
  • 作者单位

    Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China,University of Chinese Academy of Sciences, Beijing 100049, P. R. China;

    Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China,University of Chinese Academy of Sciences, Beijing 100049, P. R. China;

    Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia,Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia;

    Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia;

    Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

    Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

    Beijing National Laboratory for Molecular Sciences, CAS Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 入库时间 2022-08-18 03:11:20

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