机译:通过改变亚酞菁核心上的取代基位置,将电阻记忆行为从二元逻辑转换为三元逻辑
Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, PR China;
Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, PR China;
Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, PR China;
Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, PR China;
Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong, PR China;
机译:通过微妙的聚合物供体和分子受体设计将电阻存储器行为从二进制切换到三元逻辑
机译:石墨烯氧化物层中的三元电阻切换存储器行为
机译:通过插入超薄化学活性金属纳米层来调节基于二元氧化物的电阻式存储器件的开关行为:以Ta2O5-Ta系统为例
机译:高k三元稀土氧化物Lahoo3薄膜的单极电阻切换行为,用于非易失性存储器应用
机译:阐述和优化了高级计算应用的电阻式随机存取存储器切换行为
机译:基于Ag / GeSx / Pt的互补电阻开关用于混合CMOS /纳米电子逻辑和存储器架构
机译:非极性电阻存储器开关,具有所有四种可能的电阻 非晶三元稀土LaHoO3薄膜的开关模式
机译:对称三元开关函数:阈值逻辑的检测与实现