SURFACE ACOUSTIC WAVE TECHNIQUES FOR INVESTIGATIONS OF THE NEAR-SURFACE REGION IN InAs: (111)

摘要

Fast development of microelectronics is a result of development of various sensor and measurement techniques, and requires the search for new research methods. A possibility of applying the surface acoustic waves of Rayleigh type for the investigations of semiconductor surface is described in this paper. The theoretical relations between the transverse acoustoclcctric voltage, the surface electrical conductivity and the surface potential in InAs single crystals are presented. The experimental results of the surface investigations performed by means of the transverse acoustoelcctric voltage method, after various surface treatments of the InAs (111) samples, are also presented. These measurements enabled us to establish a strong influence of chemical and mechanical surface treatment upon the values of the surface parameters in InAs crystals.