Electrochemical deposition of nanosemiconductor CuSe on multiwalled carbon nanotubes/polyimide membrane and photoelectric property researches

摘要

Nanosemiconductor CuSe were prepared on self-made multiwalled carbon nanotubes/polyimide (COOH-MWCNTs/PI) membrane electrode by electrochemical atomic layer deposition (EC-ALD). By exploring the elements, electrochemical properties through cyclic voltammetry and differential pulse-stripping voltammetry, -0.2 and -0.55 V are finally identified as the deposition potential of copper and selenium, respectively. Current density − time curve obtained via amperometric I–t processes indicates the formation of copper layer by a two-dimensional nucleation and growth mechanism, while selenium growth is considered to be diffusion control process. X-ray powder diffraction data reveals the preferred orientation of the CuSe crystal is at (112) plane. Field emission scanning electron microscopy and energy-dispersive X-ray spectroscopy analysis show that the obtained CuSe thin film are short virgate nanostructure, and the average atomic percentage of Cu:Se is close to one. Furthermore, the ultraviolet visible (UV–Vis) transmission measurements provide a band gap of 2.0 eV. Open-circuit potential (OCP) and amperometric I–t experiments illustrate the CuSe thin film to be p-type semiconductor. Obtained results indicate that the CuSe thin film depositing on COOH-CNTs/PI membrane is appropriate to serve as the solar energy transfer material.