ITO dry-etching mechanism and its application in the fabrication of LCDs

摘要

Based on HI gas-plasma etching(high-density plasma-assisted RIE), the activation energy for an ITO dry-etching reaction was obtained. The value was calculated 35-40 kJ/mol for 20 sec from the reaction starting time. The reaction dead time is characteristics of the ITO dry-etchings process, but the reaction is relatively simple. Therefore, ITO dry-etching technology, based on HI gas plasma, is useful in the fabrication of LCDs, and was used in a recently developed Multi-Coaxial-Plasma- Source(MCPS)dry etcher.