A 5291-ppi organic light-emitting diode display using field- effect transistors including a c-axis aligned crystalline oxide semiconductor

摘要

C-axis-aligned crystalline-oxide semiconductor field-effect transistor (CAAC-OS FET) can be scaled down to a width and a length of 60 nm. We fabricated an organic light-emitting diode (OLED) display with more than 5000 ppi, which is required in virtual reality (VR) display applications, using CAAC-OS FETs as the backplane.