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首页> 外文期刊>Journal of power sources >Mechanical stresses and morphology evolution in germanium thin film electrodes during lithiation and delithiation
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Mechanical stresses and morphology evolution in germanium thin film electrodes during lithiation and delithiation

机译:锗薄膜电极在锂化和脱锂过程中的机械应力和形态演变

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摘要

Germanium and silicon can be used to reversibly store large amounts of lithium, but as a result, suffer from significant volumetric and structural changes during cycling. The mechanical stresses associated with these changes were investigated using in situ stress measurements on thin film electrodes. Results for germanium, with its superior transport properties, are compared to silicon, which is structurally similar. The nominal stresses developed in amorphous lithium germanium (a-LixGe) were found to be roughly 30% lower than in a-LixSi. When the cycling rate was increased, the germanium electrode showed a smaller loss in capacity than silicon. Crystalline Li15Ge4 was observed to form below 100 mV and resulted in a distinct tensile bump in nominal stress. During extended cycling, the maximum mechanical stress signal of the film electrodes irreversibly decreased without an apparent loss in capacity. In contrast to silicon films, which typically fracture and lose capacity during cycling, germanium films were capable of reorganizing into three-dimensional structures, thereby improving their mechanical response while minimizing electrochemical energy loss. The reduced nominal flow stresses observed in a-LixGe and their weak dependence on charge discharge rates correlated with the reduced rate sensitivity found in germanium electrodes as compared to silicon. (C) 2015 Elsevier B.V. All rights reserved.
机译:锗和硅可用于可逆地存储大量锂,但结果在循环过程中会遭受体积和结构的重大变化。使用薄膜电极上的原位应力测量研究了与这些变化相关的机械应力。锗具有出色的传输性能,其结果与结构相似的硅相比。发现非晶锂锗(a-LixGe)中产生的标称应力比a-LixSi中的标称应力低约30%。当增加循环速率时,锗电极的容量损失比硅小。观察到结晶Li15Ge4的形成低于100 mV,并导致标称应力出现明显的拉伸隆起。在延长的循环过程中,薄膜电极的最大机械应力信号会不可逆转地降低,而不会明显降低容量。与通常在循环过程中破裂并失去容量的硅膜相反,锗膜能够重组为三维结构,从而改善其机械响应,同时将电化学能量损失降至最低。与硅相比,在a-LixGe中观察到的标称流应力降低以及它们对电荷放电速率的弱依赖性与锗电极中发现的速率灵敏度降低相关。 (C)2015 Elsevier B.V.保留所有权利。

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