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Synthesis and characterization of silica doped alumina catalyst support with superior thermal stability and unique pore properties

机译:二氧化硅掺杂的氧化铝催化剂载体的合成和表征,具有出色的热稳定性和独特的孔隙性能

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摘要

A facile, solvent-deficient, one-pot synthesis of a thermally stable silica-doped alumina, having high surface area, large pore volume and uniquely large pores, has been developed. Silica-doped alumina (SDA) was synthesized by adding 5 wt% silica from tetraethyl orthosilicate (TEOS) to aluminum isoproxide (AIP), a 1:5 mol ratio AIP to water, and a 1:2 mol ratio TEOS to water in the absence of a template. The structure of silica-doped alumina was studied by in situ high-temperature powder XRD, nitrogen adsorption, thermogravimetric analysis, solid-state NMR, and TEM. The addition of silica significantly increases the stability of gamma-Al2O3 phase to 1200 A degrees C while maintaining a high surface area, a large pore volume and a large pore diameter. After calcination at 1100 A degrees C for 2 h, a surface area of 160 m(2)/g, pore volume of 0.99 cm(3)/g, and a bimodal pore size distribution of 23 and 52 nm are observed. Compared to a commercial silica-doped alumina, after calcination for 24 h at 1100 A degrees C, the surface area, pore volume, and pore diameter SDA are higher by 46, 155, and 94 %, respectively. Results reveal that Si stabilizes the porous structure of gamma-Al2O3 up to 1200 A degrees C, while unstabilized alumina is stable to only 900 A degrees C. From our data, we infer that Si enters tetrahedral vacancies in the defect spinel structure of alumina without moving Al from tetrahedral positions and forms a silica-alumina interface.
机译:已经开发了一种容易的,溶剂不足的,一锅法合成的具有高表面积,大孔体积和独特大孔的热稳定的二氧化硅掺杂氧化铝。通过从原硅酸四乙酯(TEOS)向异丙醇铝(AIP)中添加5 wt%的二氧化硅,在水中添加1:5摩尔比的AIP和在水中添加1:2摩尔比的TEOS来合成二氧化硅掺杂的氧化铝(SDA)。缺少模板。通过原位高温粉末XRD,氮吸附,热重分析,固态NMR和TEM研究了掺杂二氧化硅的氧化铝的结构。二氧化硅的添加将γ-Al2 O 3相的稳定性显着提高至1200A℃,同时保持高表面积,大孔体积和大孔径。在1100 A摄氏度下煅烧2小时后,观察到表面积为160 m(2)/ g,孔体积为0.99 cm(3)/ g,双峰孔径分布为23和52 nm。与市售的二氧化硅掺杂氧化铝相比,在1100 A的温度下煅烧24小时后,表面积,孔体积和孔径SDA分别增加46%,155%和94%。结果表明,Si稳定了高达1200 A的γ-Al2O3的多孔结构,而未稳定的氧化铝仅稳定到900 A的温度。根据我们的数据,我们推断出Si在没有缺陷的尖晶石结构的氧化铝中进入四面体空位。从四面体位置移动铝并形成二氧化硅-氧化铝界面。

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