首页> 外文期刊>Journal of Optics >On the analysis of near-and far-field Radiation patterns for longer wavelength Laser diodes (1.3-AND 1.55 μm)
【24h】

On the analysis of near-and far-field Radiation patterns for longer wavelength Laser diodes (1.3-AND 1.55 μm)

机译:分析较长波长激光二极管(1.3-AND 1.55μm)的近场和远场辐射方向图

获取原文
获取原文并翻译 | 示例
       

摘要

Analytical approximation of near-and far-field parameters characterizing the TEo mode propagation in symmetric InGaAsP/InP buried-heterostructure (BH) laser waveguides are described. the beam width is approximated within 5.7 percent by analyti- cal formulas covering useful ranges of cavity thickness and refractive index steps. By using a Gaussian approximation for near-field distribution and solving the maximization of the variational integral by extensive numerical calculations using least-mean-square (LMS) method, it is found that the Gaussian region has been extended to the values of normalised waveguide thickness, D<1.5 which was stated earlier as non Gaussian re- gion [1]. The lower bound values of D is obtained as 1.11 for 1.3 μm wavelength and 0.9408 for 1.55 μm wavelength.
机译:描述了表征TEo模式在对称InGaAsP / InP埋入异质结构(BH)激光波导中传播的近场和远场参数的解析近似。通过覆盖腔体厚度和折射率阶跃有用范围的分析公式,光束宽度大约在5.7%之内。通过使用高斯近似进行近场分布并通过使用最小均方(LMS)方法的大量数值计算来求解变分积分的最大值,发现高斯区域已扩展到归一化波导厚度的值,D <1.5,这之前被称为非高斯地区[1]。 D的下限值对于1.3μm波长为1.11,对于1.55μm波长为0.9408。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号