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CdS quantum dots in a novel glass with a very low activation energy and its variation of diffusivity with temperature

机译:活化能极低的新型玻璃中的CdS量子点及其扩散系数随温度的变化

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CdS quantum dots of different average sizes in the range 2 to 3.8 nm were grown by diffusion-limited growth process in indigenously made silicate glass. The absorption spectra showed a strong quantum confinement effect with a blue shift of the order of ~500 meV depending on the average size. Critical radius of quantum dots was found to be 1.8 nm. The size dispersion decreased from 15.2 to 12.5% with a 20% increase in the particle size. The activation energy for diffusion was found to be very low i.e. 193 kJ mol−1 and the diffusion coefficient increased by 60% for 10 K rise in temperature. The PL emission spectra showed the presence of only deep traps around ~600 nm with a red shift of 200 nm. No shallow traps or band edge emission was observed. The PL peak position changed from 560 to 640 nm with a 35 K increase in annealing temperature.
机译:在本地制造的硅酸盐玻璃中,通过扩散限制生长工艺生长了2至3.8 nm范围内的平均尺寸不同的CdS量子点。吸收光谱显示出强大的量子限制效应,蓝移的幅度约为500 meV,具体取决于平均大小。发现量子点的临界半径为1.8nm。粒度分散度从15.2降至12.5%,而粒度增加了20%。发现扩散的活化能非常低,即193 kJ mol -1 ,并且随着温度升高10 K,扩散系数增加60%。 PL发射光谱显示,只有约600 nm的深陷阱存在,红移为200 nm。没有观察到浅陷阱或带边缘发射。随着退火温度增加35 K,PL峰位置从560 nm变为640 nm。

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