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CdS quantum dots in a novel glass with a very low activation energy and its variation of diffusivity with temperature

机译:活化能极低的新型玻璃中的CdS量子点及其扩散系数随温度的变化

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CdS quantum dots of different average sizes in the range 2 to 3.8 nm were grown by diffusion-limited growth process in indigenously made silicate glass. The absorption spectra showed a strong quantum confinement effect with a blue shift of the order of ?500 meV depending on the average size. Critical radius of quantum dots was found to be 1.8 nm. The size dispersion decreased from 15.2 to 12.5% with a 20% increase in the particle size. The activation energy for diffusion was found to be very low i.e. 193 kJ mol-1 and the diffusion coefficient increased by 60% for 10 K rise in temperature. The PL emission spectra showed the presence of only deep traps around ?600 nm with a red shift of 200 nm. No shallow traps or band edge emission was observed. The PL peak position changed from 560 to 640 nm with a 35 K increase in annealing temperature.
机译:在本地制造的硅酸盐玻璃中,通过扩散限制生长工艺生长了2至3.8 nm范围内的平均尺寸不同的CdS量子点。吸收光谱显示出强的量子约束效应,取决于平均尺寸,蓝移约为?500 meV。发现量子点的临界半径为1.8nm。粒度分散度从15.2降至12.5%,而粒度增加了20%。发现扩散的活化能非常低,即193kJ mol-1,并且随着温度升高10K,扩散系数增加了60%。 PL发射光谱显示仅存在约600nm附近的深陷阱,并且具有200nm的红移。没有观察到浅陷阱或带边缘发射。随着退火温度增加35 K,PL峰位置从560 nm变为640 nm。

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