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Influence of Annealing Temperature on Structural, Morphological, Optical and Electrical Properties of Sol-Gel SnO_2 Thin Films

机译:退火温度对Sol-Gel SnO_2薄膜结构,形貌,光学和电学性质的影响

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摘要

SnOsub2/sub thin films were prepared on glass substrates by sol-gel spin coating method using stannous chloride dihydrate and ethyl alcohol absolute as raw materials at annealing temperature 450-550 °C. The crystal phase was measured by X-ray diffraction (XRD) and showed tetragonal rutile structure with a preferential orientation of (110). Atomic force microscope (AFM) and Scanning Electron Microscope (SEM) images revealed the homogeneous grains distribution, and SEM images showed the obvious rectangular objects corresponding to tetragonal structure. Optical properties were observed by the transmittance in ultraviolet-visible (UV-Vis) region and optical energy gap, which revealed the transmittance over 75% and energy gap between 3.84 eV and 3.89 eV. Finally, I-V characteristics were tested to research electrical properties, and found the gradual non-linear property and the increase of resistance.
机译:以二水合氯化亚锡和无水乙醇为原料,在450〜550℃的退火温度下,通过溶胶-凝胶旋涂法在玻璃基板上制备了SnO 2 薄膜。通过X射线衍射(XRD)测量晶相,并显示具有优选取向(110)的四方金红石结构。原子力显微镜(AFM)和扫描电子显微镜(SEM)图像显示出均匀的晶粒分布,SEM图像显示出明显的矩形物体,对应于四方结构。通过紫外-可见(UV-Vis)区域的透射率和光能隙观察光学性质,其揭示了超过75%的透射率和3.84eV至3.89eV之间的能隙。最后,测试了I-V特性以研究电性能,发现了渐进的非线性特性和电阻的增加。

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