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首页> 外文期刊>Journal of microanolithography, MEMS, and MOEMS >Design, modeling, and fabrication of crab-shape capacitive microphone using silicon-on-isolator wafer
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Design, modeling, and fabrication of crab-shape capacitive microphone using silicon-on-isolator wafer

机译:使用隔离硅片的蟹形电容式麦克风的设计,建模和制造

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This paper presents design, modeling, and fabrication of a crab-shape microphone using silicon-on-isolator (SOI) wafer. SOI wafer is used to prevent the additional deposition of sacrificial and diaphragm layers. The holes have been made on diaphragm to prevent back plate etching. Dry etching is used for removing the sacrificial layer, because wet etching causes adhesion between the diaphragm and the back plate. Crab legs around the perforated diaphragm allow for improving the microphone performance and reducing the mechanical stiffness and air damping of the microphone. In this structure, the supply voltage is decreased due to the uniform deflection of the diaphragm due to the designed low-K (spring constant) structure. An analytical model of the structure for description of microphone behavior is presented. The proposed method for estimating the basic parameters of the microphone is based on the calculation of the spring constant using the energy method. The microphone is fabricated using only one mask to pattern the crab-shape diaphragm, resulting in a low-cost and easy fabrication process. The diaphragm size is 0.3 mm × 0.3 mm, which is smaller than the conventional micro-electromechanical systems capacitive microphone. The results show that the analytical equations have a good agreement with measurement results. The device has the pull-in voltage of 14.3 V, a resonant frequency of 90 kHz, an open-circuit sensitivity of 1.33 mV/Pa under bias voltage of 5 V. Comparing with previous works, this microphone has several advantages: SOI wafer decreases the fabrication process steps, the microphone is smaller than the previous works, and crab-shape diaphragm improves the microphone performances.
机译:本文介绍了使用绝缘体上硅(SOI)晶片的蟹形麦克风的设计,建模和制造。 SOI晶片用于防止牺牲层和隔膜层的额外沉积。孔已在隔膜上制成,以防止背板蚀刻。干蚀刻用于去除牺牲层,因为湿蚀刻导致隔膜和背板之间的粘附。多孔膜片周围的蟹腿可以改善麦克风的性能,并降低麦克风的机械刚度和空气阻尼。在这种结构中,由于设计的低K(弹簧常数)结构导致膜片均匀偏转,因此电源电压降低。提出了用于描述麦克风行为的结构分析模型。所提出的用于估计麦克风的基本参数的方法是基于使用能量方法的弹簧常数的计算。麦克风仅使用一个掩膜即可制作出蟹形振膜的图案,从而实现了低成本且易于制造的过程。振膜尺寸为0.3 mm×0.3 mm,小于常规的微机电系统电容式麦克风。结果表明,解析方程与测量结果吻合良好。该器件的吸合电压为14.3 V,谐振频率为90 kHz,在5 V偏置电压下的开路灵敏度为1.33 mV / Pa。与以前的工作相比,该麦克风具有以下优点:SOI晶片减少了在制造过程中,麦克风比以前的作品要小,蟹形振膜提高了麦克风的性能。

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