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Synthesis of a minute SiC product from polyvinylsilane with radiation curing Part I Radiation curing of polyvinylsilane

机译:辐射固化由聚乙烯基硅烷合成微小的SiC产品第一部分聚乙烯基硅烷的辐射固化

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摘要

Irradiation effect of γ-ray on polyvinylsilane (PVS), which is a liquid organosilicon polymer, was investigated and the optimum curing condition to synthesize a minute SiC product with radiation curing was discussed. Room temperature and liquid nitrogen temperature (77 K) were examined as the irradiation temperature. In both cases, the cured PVS maintaining its formed shape could be obtained by γ-ray irradiation under vacuum, and the cured PVS in solid state at room temperature was obtained by irradiation with dose of above 3–4 MGy. It was found that the efficiency of crosslinking in case of the irradiation at room temperature is higher than that in case of irradiation at 77 K. The PVS injected into a mold was irradiated by γ-ray with dose of 3.6 MGy at room temperature under vacuum, and pyrolyzed at 1273 K in Ar gas atmosphere. As a result, minute SiC products which had similar shapes to the mold and the sizes of 30–60 μm were obtained.
机译:研究了γ射线对液态有机硅聚合物聚乙烯硅烷(PVS)的辐照效果,并讨论了通过辐射固化合成微小SiC产物的最佳固化条件。检查室温和液氮温度(77K)作为照射温度。在这两种情况下,都可以通过在真空下通过γ射线辐照获得保持其成形形状的固化PVS,并通过以3-4 MGy以上的剂量辐照获得室温下处于固态的固化PVS。发现在室温下照射的情况下的交联效率高于在77 K下照射的情况下的交联效率。在室温下在真空下用3.6 MGy的γ射线照射注入模具中的PVS。 ,并在Ar气氛中于1273 K处热解。结果,获得了与模具形状相似且尺寸为30–60μm的微小SiC产品。

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  • 来源
    《Journal of Materials Science》 |2004年第18期|5689-5694|共6页
  • 作者单位

    Takasaki Radiation Chemistry Research Establishment Japan Atomic Energy Research Institute;

    Takasaki Radiation Chemistry Research Establishment Japan Atomic Energy Research Institute;

    Takasaki Radiation Chemistry Research Establishment Japan Atomic Energy Research Institute;

    Department of Metallurgy and Materials Science Graduate School of Engineering Osaka Prefecture University;

    Department of Metallurgy and Materials Science Graduate School of Engineering Osaka Prefecture University;

    Department of Chemistry and Biochemistry Fukushima National College of Technology;

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