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机译:界面电荷对MG_2SI源异质结双栅极隧道场效应晶体管的模拟和RF性能的影响
Chitkara University School of Engineering and Technology Chitkara University Baddi Himachal Pradesh India;
VLSI Centre of Excellence Chitkara University Institute of Engineering and Technology Chitkara University Rajpura Punjab India;
VLSI Centre of Excellence Chitkara University Institute of Engineering and Technology Chitkara University Rajpura Punjab India;
VLSI Centre of Excellence Chitkara University Institute of Engineering and Technology Chitkara University Rajpura Punjab India;
机译:异质结双栅隧道场效应晶体管的直流和模拟/射频性能优化
机译:双栅极线隧道场效应晶体管器件,用于卓越的模拟性能
机译:Si 0.6 Ge 0.4异质结的少掺杂隧道场效应晶体管,用于改善开关电流比和模拟/ RF性能
机译:双栅扩展源极隧穿场效应晶体管的射频和稳定性能分析
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:T形栅极双源极隧道场效应晶体管的模拟/ RF性能
机译:边缘态对磷光子异质结隧穿场效应晶体管器件性能的影响
机译:渐变层和隧道效应对alGaas / Gaas异质结双极晶体管性能的影响