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Dielectric and ferromagnetic properties of (Ni, Co) co-doped SnO_2 nanoparticles

机译:(Ni,Co)共掺杂SnO_2纳米颗粒的介电和铁磁性性质

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摘要

Different nanoparticles (NPs) including S1, S2, S3, S4, and S5 are prepared, using the co-precipitation route. The substitution of Co and Ni into the SnO_2 matrix brought considerable modification in the physical attributes of all co-doped samples. The XRD data reveal that the calculated crystallite size is reduced from 10.54 to 1.65 nm with piling up oxygen vacancies (OVs) concentration when the Co content varies from 2.2 to 11 mM. The insertion of Co and Ni in SnO_2 (lattice) produces ample alteration in the material traits of all samples. The dielectric properties strongly exhibit doping dependence. The dielectric measures including (dielectric loss ε', dielectric loss factor tan δ, and AC conductivity σ_(ac) ) are varied with growing Co content and achieved the utmost values for S4 NPs. The tanδ shows the dispersive nature, and relaxation peaks are identified, in which intensities are enhanced with growing Co content. The dielectric behavior and σ_(ac) variations show that the dispersion is induced by polarization at the interfaces due to OVs and hopping processes. All these materials (samples) are interesting for device applications due to their large dielectric constant. The appearance of hysteresis loops show ferromagnetic nature with enhancement in saturation magnetization arises from a substantial measure of induced OVs (defects) by co-doping in the system (samples). The current work shows the doping-induced variations in dielectric and magnetic attributes. The OVs produce ferromagnetic behavior in (Ni, Co) co-doped SnO_2 NPs applicable in high-frequency dielectric devices, and spintronics.
机译:使用共沉淀途径制备包括S1,S2,S3,S4和S5的不同纳米颗粒(NPS)。 CO和NI的替代在所有共掺杂样品的物理属性中替换为SNO_2矩阵。 XRD数据显示,当CO含量从2.2〜11mm变化时,计算出的微晶尺寸从10.54到1.65nm降低到1.65nm。在SnO_2(格子)中的CO和Ni的插入产生充分的所有样品的材料性状的倍增。电介质特性强烈表现出掺杂依赖性。包括(介电损耗ε',介电损耗因子TANδ和交流电导率σ_(AC))的介电措施随着CO含量而变化,并为S4 NPS实现了最大的值。 Tanδ表示分散性质,鉴定弛豫峰,其中强度随着CO含量的增长而增强。电介质行为和σ_(AC)变化表明,由于OVS和跳跃过程引起的界面处的偏振引起了分散。由于其大介电常数,所有这些材料(样本)都很有趣。滞后环的外观显示出饱和磁化增强的铁磁性自然,通过在系统(样品)中的共同掺杂来源的诱导OV(缺陷)产生了大量诱导的OV(缺陷)。目前的工作显示了介质和磁性属性的掺杂诱导的变化。 OVS在适用于高频电介质器件和闪光灯的(NI,CO)共掺杂的SNO_2 NP中产生铁磁行为,以及闪闪发光的。

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  • 来源
    《Journal of materials science 》 |2021年第14期| 19859-19870| 共12页
  • 作者单位

    Department of Material Science Engineering Jiangsu University Zhenjiang 212013 People's Republic of China Department of Physics Abdul Wali Khan University Mardan Mardan Khyber Pukhtunkhwa (KP) 23200 Pakistan;

    Department of Physics Abdul Wali Khan University Mardan Mardan Khyber Pukhtunkhwa (KP) 23200 Pakistan;

    Department of Physics Abdul Wali Khan University Mardan Mardan Khyber Pukhtunkhwa (KP) 23200 Pakistan;

    Department of Physics University of Lakki Marwat Lakki Marwat Khyber Pakhtunkhwa (KP) 28420 Pakistan;

    Department of Physics Abdul Wali Khan University Mardan Mardan Khyber Pukhtunkhwa (KP) 23200 Pakistan;

    Department of Physics Abdul Wali Khan University Mardan Mardan Khyber Pukhtunkhwa (KP) 23200 Pakistan;

    Department of Material Science Engineering Jiangsu University Zhenjiang 212013 People's Republic of China Department of Physics University of Lakki Marwat Lakki Marwat Khyber Pakhtunkhwa (KP) 28420 Pakistan;

    Department of Physics University Peshawar Peshawar Khyber Pakhtunkhwa (KP) Pakistan;

    Department of Material Science Engineering Jiangsu University Zhenjiang 212013 People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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