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Study on the growth and processing technology of large-size KCl_(0.5)Br_(0.5) crystal

机译:大尺寸KCl_(0.5)BR_(0.5)晶体的生长和加工技术研究

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摘要

A high-quality KCl_(0.5)Br_(0.5) crystal has been grown by using the resistance heating Czochralski (Cz) method under the best process parameters (rotating speed: 6-8 r/min, pulling speed: 1-2 mm/h, circulating water temperature: 28 ± 1 °C, cooling rate: 8-10 °C/h, and axial temperature gradient: 1-2 °C/mm). The deliquescence analysis of the KCl_(0.5)Br_(0.5) crystal indicates that the deliquescence of KCl_(0.5)Br_(0.5) crystal strongly depends on the temperature and humidity and the dehquescence of the crystal has been proved to be a physical process by carrying out X-ray diffraction (XRD), atomic force microscopic (AFM), and energy dis-persive X-ray spectroscopic (EDX) measurements. The results of the polishing fluid composition experiment have shown that the best polishing fluid composition is 'water + ethanol + surfactant X', and the best ratio between them is 87.5∶9.5∶3.0. The effects of polishing pressure, polishing disk speed, polishing fluid flow rate, and polishing time on the removal rate and roughness of the KCl_(0.5)Br_(0.5) crystal surface have been analyzed. The best parameters found for the crystal processing are the optimal pressure is 0.1042 MPa, the polishing fluid flow rate is 15 ml/min, the rotating speed of the polishing disk is 30 r/min, and the polishing time is 20 min. The performance test of the polished crystal ele-ment has shown that the transmittance of the crystal with a thickness of 4 mm is 91.7%, and the surface roughness of the crystal is 3.96 nm. Results obtained in the present study provide the technical route and experimental support for the processing of soft and moisture-prone crystals.
机译:通过在最佳工艺参数下使用电阻加热Czochralski(CZ)方法(旋转速度:6-8 r / min,拉速:1-2 mm / H,循环水温:28±1°C,冷却速率:8-10°C / h,轴向温度梯度:1-2°C / mm)。 KCl_(0.5)BR_(0.5)晶体的潮解分析表明KCl_(0.5)BR_(0.5)晶体的潮解强烈取决于温度和湿度,并且已被证明是晶体的曲线是物理过程进行X射线衍射(XRD),原子力显微镜(AFM)和能量分配X射线光谱(EDX)测量。抛光液组成实验的结果表明,最佳抛光液组合物是“水+乙醇+表面活性剂X”,它们之间的最佳比例为87.5:9.5:3.0。已经分析了抛光压力,抛光盘速度,抛光流体流速和抛光时间的影响,对KCl_(0.5)BR_(0.5)晶体表面的去除率和粗糙度进行了抛光时间。为晶体处理的最佳参数是最佳压力为0.1042MPa,抛光流体流速为15ml / min,抛光盘的旋转速度为30升/分钟,抛光时间为20分钟。抛光晶体ELE-测量的性能试验表明,厚度为4mm的晶体的透射率为91.7%,晶体的表面粗糙度为3.96nm。本研究中获得的结果提供了用于加工软和易晶体的技术途径和实验支持。

著录项

  • 来源
    《Journal of materials science》 |2021年第12期|16432-16444|共13页
  • 作者单位

    Guangan Vocational Technical College Guangan 638000 China;

    School of Materials Science and Engineering Ji Lin Jian Zhu University Changchun 130018 China;

    School of Materials Science and Engineering Ji Lin Jian Zhu University Changchun 130018 China;

    School of Materials Science and Engineering Ji Lin Jian Zhu University Changchun 130018 China;

    School of Materials Science and Engineering Changchun University of Science and Technology Changchun 130022 China;

    School of Materials Science and Engineering Changchun University of Science and Technology Changchun 130022 China;

    School of Materials Science and Engineering Ji Lin Jian Zhu University Changchun 130018 China;

    CSIR Emeritus Scientist Department of Physics Bharathidasan University Tiruchirappalli Tamil Nadu 620024 India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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