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Cubic, orthorhombic and amorphous SnS thin films on flexible plastic substrates by CBD

机译:CBD上柔性塑料基材上的立方体,正交和无定形SNS薄膜

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摘要

Tin sulfide (SnS) thin films were successfully deposited on acetate plastics substrates by chemical bath deposition at 70 °C by 2 h varying the pH value. SnS films exhibited good adherence, compact and uniform. X-ray diffraction (XRD) results showed that it is possible to obtain cubic, amorphous, and orthorhombic crystalline structures for SnS films depending on the pH value in a range from 8.24 to 10.93. Scanning electron microscopy (SEM) analysis revealed a morphological transformation of SnS films from spherical shape to flakes shape for cubic and orthorhombic structures, respectively. The pH vari-ation influences on SnS films stoichiometry, for low pH the S/Sn ratio is 0.15 while for pH around of 10.45 the S/Sn ratio is 0.90 which is near-stoichiometric. Raman studies confirm SnS vibrational modes associated with cubic and orthorhombic structure. Optical properties also were modified varying the pH and the absorption coefficients are larger than 10~4 cm~(-1) for all SnS films deposited on acetate plastic substrates. The band gap values were obtained from 1.08 to 1.72 eV and associated with cubic, amorphous, and orthorhombic SnS. The results suggest that it is possible to modify the crystalline structure, band gap, and S/Sn ratio varying the pH value, and this work promotes the appli-cation of SnS in flexible devices.
机译:通过化学浴沉积在70℃下成功地沉积硫化锡(SNS)薄膜在70℃下以2小时改变pH值。 SNS薄膜表现出良好的粘附,紧凑且均匀。 X射线衍射(XRD)结果表明,根据8.24至10.93的范围内的pH值,可以获得SNS膜的立方体,无定形和正晶晶体结构。扫描电子显微镜(SEM)分析揭示了来自球形形状的SNS薄膜的形态转化,分别用于剥落立方和正交结构的形状。对SnS膜的pH变化对SNS膜的影响,对于低pH,S / Sn比为0.15,而对于pH左右,S / Sn比为0.90,近部化学计量。拉曼研究证实了与立方体和正骨结构相关的SNS振动模式。对于沉积在乙酸盐塑料基材上的所有SNS薄膜,光学性质也改变改变pH,吸收系数大于10〜4cm〜(-1)。带隙值从1.08升至1.72eV,与立方体,无定形和正交的SNS相关。结果表明,可以改变改变pH值的结晶结构,带隙和S / Sn比,并且该工作促进了柔性器件中的SNS的应用。

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  • 来源
    《Journal of materials science 》 |2021年第12期| 15898-15906| 共9页
  • 作者单位

    Centro de Investigacion en Dispositivos Semiconductores Instituto de Ciencias BUAP 14 Sur y Av. San Claudio C. U. Edificio IC-6 CP. 72570 Puebla Mexico;

    Centro de Investigacion en Dispositivos Semiconductores Instituto de Ciencias BUAP 14 Sur y Av. San Claudio C. U. Edificio IC-6 CP. 72570 Puebla Mexico;

    Instituto de Fisica BUAP 14 Sur y Av. San Claudio C. U. Edificio IF2 C.P.72570 Puebla Mexico;

    Centro de Investigacion en Dispositivos Semiconductores Instituto de Ciencias BUAP 14 Sur y Av. San Claudio C. U. Edificio IC-6 CP. 72570 Puebla Mexico;

    Instituto de Fisica BUAP 14 Sur y Av. San Claudio C. U. Edificio IF2 C.P.72570 Puebla Mexico;

    Centro de Investigacion en Dispositivos Semiconductores Instituto de Ciencias BUAP 14 Sur y Av. San Claudio C. U. Edificio IC-6 CP. 72570 Puebla Mexico;

    Centro de Investigacion en Dispositivos Semiconductores Instituto de Ciencias BUAP 14 Sur y Av. San Claudio C. U. Edificio IC-6 CP. 72570 Puebla Mexico;

    Facultad de Ciencias Quimicas BUAP 14 Sur y Av. San Claudia C. U. Edificio iFCQ4-201 C.P. 72570 Puebla Mexico;

    Centro de Investigacion en Dispositivos Semiconductores Instituto de Ciencias BUAP 14 Sur y Av. San Claudio C. U. Edificio IC-6 CP. 72570 Puebla Mexico;

    Centro de Investigacion en Dispositivos Semiconductores Instituto de Ciencias BUAP 14 Sur y Av. San Claudio C. U. Edificio IC-6 CP. 72570 Puebla Mexico;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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