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机译:低泄漏GaN Hemts,具有低损伤蚀刻工艺制造的亚100nm t形栅极
School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China Harbin Institute of Technology Harbin 150001 China;
School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China Department of Electronic and Computer Engineering The Hong Kong University of Science and Technology Hong Kong China;
School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China;
School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China;
School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China GaN Device Engineering Technology Research Center of Guangdong Shenzhen 518055 China Shenzhen Institute of Wide-Bandgap Semiconductors ShenZhen 518100 China;
School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China Department of Materials Engineering The University of British Columbia Vancouver BC V6T 1Z4 Canada;
School of Engineering and Computer Science Washington State University Vancouver WA 98686 USA;
School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China GaN Device Engineering Technology Research Center of Guangdong Shenzhen 518055 China Shenzhen Institute of Wide-Bandgap Semiconductors ShenZhen 518100 China;
机译:化合物半导体晶体管在低损伤亚100 nm钨栅极反应离子刻蚀过程中的等离子体发射光谱
机译:通过优化干法刻蚀工艺来最小化栅极AlGaN / GaN HEMT的泄漏电流
机译:通过优化干蚀刻工艺,将嵌入式栅极AIGaN / GaN HEMT的漏电流降至最低
机译:通过150 nm Y栅极工艺制造的AlGaN / GaN HEMT与InAlN / GaN HEMT
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:在未掺杂的AlGaN / GaN HEMT结构上制造的门控pH传感器
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明
机译:自对准aLD alOx T栅极绝缘体,用于siNx钝化alGaN / GaN HEmT中的栅极漏电流抑制