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首页> 外文期刊>Journal of materials science >Crystal structure and improved microwave dielectric properties of ZnZr_((1_x))Ti_xNb_2O_8 ceramics
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Crystal structure and improved microwave dielectric properties of ZnZr_((1_x))Ti_xNb_2O_8 ceramics

机译:晶体结构和改进的ZnZR _((1_x))Ti_xnb_2O_8陶瓷的微波介电性能

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摘要

In this work, ZnZr_((1_x))Ti_xNb_2O_8 (x = 0, 0.1, 0.2, 0.3, 0.4, 0.5) ceramics were synthesized using solid-state reaction method. Rietveld refinement and Raman analysis were employed to investigate the correlation between crystal structure and microwave dielectric properties. Substitution of Ti~(4+) for Zr~(4+) promoted grain growth and ceramic sintering, which is confirmed by SEM results and relative density. Second phase (ZnTiNb_2O_8), which had poorer microwave dielectric properties than that of ZnTiNb_2O_8 ceramics, occurred when ⅹ > 0.4 because of exceeded solution limit. However, Ti~(4+) ions enter Zr sites when x≤0.3, and this then affects A/B-site bond lengths and structural characteristics of NbO_6 octahedron. This improved microwave dielectric properties and mainly, promoted quality factor (Q xf). Moreover, excellent microwave dielectric properties of ε_r=29.75, Q ×f= 107,303 GHz, and τ_f=-24.41ppm/°C were obtained for ZnZr_(0.8)Ti_(0.2)Nb_2O_8 (x = 0.2) ceramics sintered at 1150 °C. Thus, the material has a good application prospect in microwave devices.
机译:在这项工作中,使用固态反应方法合成ZnZR _((1_X))Ti_XNB_2O_8(X = 0,0.1,0.2,0.3,0.4,0.5)陶瓷。采用RIETVELD改进和拉曼分析来研究晶体结构与微波介电性能之间的相关性。 Ti〜(4+)的取代Zr〜(4+)促进的谷物生长和陶瓷烧结,通过SEM结果和相对密度来证实。微波介电性能较差的第二阶段(ZntinB_2O_8),而ZnTinB_2O_8陶瓷的介质较差,当由于超过溶液限制而产生时,发生在≥0.4时。然而,Ti〜(4+)离子在x≤0.3进入ZR位点,然后影响NBO_6八面体的A / B位点粘合长度和结构特征。这种改进的微波介电性能和主要促进了质量因子(Q XF)。此外,对于在1150℃下烧结的ZnZR_(0.8)Ti_(0.2)Nb_2O_8(x = 0.2)陶瓷,优异地,获得ε_R= 29.75,Q×F = 107,303GHz和τ_f= -24.41ppm /℃/℃/℃的优异微波介电性能。(0.2)Nb_2O_8(x = 0.2)陶瓷陶瓷。因此,该材料在微波器件中具有良好的应用前景。

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  • 来源
    《Journal of materials science 》 |2020年第6期| 4769-4779| 共11页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Jiangxi Guo Chuang Industrial Park Development Co. Ltds Ganzhou China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Jiangxi Guo Chuang Industrial Park Development Co. Ltds Ganzhou China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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