Structural and electrical characterization of AgInS2 thin films grown by single-source thermal evaporation method

摘要

Structural and electrical properties of AgInS2 (AIS) thin films grown by single-source thermal evaporation method were studied. The X-ray diffraction spectra indicated that the AIS single phase was successfully grown by annealing above 400 degrees C in air. The grain size of the AIS crystals was above 2.5 mu m from the surface photograph. Furthermore, the AIS grain sizes became large with increasing the annealing temperatures. All the samples indicated n-type conduction by the Van der Pauw technique. The carrier concentrations and the resistivities of the AIS films at room temperature were in the range of 10(19)-10(22) cm(-3) and 10(-1)-10(-3) Omega cm, respectively. Therefore the mobilities increased from 0.6 to 6.0 cm(2)/Vs with increasing the grain sizes. (C) 2005 Springer Science + Business Media, Inc.