Effects of high temperature electron irradiation on trench-IGBT

摘要

The degradation of the electrical properties of IGBTs (Insulated-Gate Bipolar Transistors) by 2-MeV electron irradiation at high-temperatures was studied. The irradiation temperatures were 25, 100, 200 and 300 degrees C, and the fluence was fixed at 10(15) e/cm(2). For most experimental conditions, the threshold voltage (V-TH) is observed to recover partially during 100 degrees C and the saturation voltage (V-CEsat) increase is most pronounced at 100 degrees C. It is shown that in this irradiation temperature range, the temperature dependency of the voltage shift due to the radiation-induced interface traps (Delta V-it) and the voltage shift due to the radiation-induced oxide traps (Delta V-ot) are different, which suggests a possible degradation mechanism for these phenomena. It is tentatively suggested that the diffusion of hydrogen released from the gate by the 2-MeV electrons passivates the interface traps during the high temperature irradiation. (C) 2005 Springer Science + Business Media, Inc.