Temperature dependence of ZnO thin films grown on Si substrate

摘要

The structural and optical properties of ZnO thin films grown on Si substrates were investigated for different growth temperatures in the range of 520-720 ℃. X-ray diffraction investigations revealed the preferred c-axis oriented growth of ZnO thin films, which was further confirmed by the presence of ZnO (0002) diffraction spots with arc shape. The increase in growth temperature transformed surface morphology from pyramidal with columnar grains to relatively flat surface with increased grain size. In addition, the increased growth temperature caused redshift and intensity enhancement of band-edge emission of the ZnO, which were related to the increase in tensile strain and the grain size, respectively.