Structural, optical and electrical studies on nanocrystalline tin oxide (SnO_2) thin films by electron beam evaporation technique

摘要

Nanocrystalline tin oxide (SnO_2) thin films were coated using electron beam evaporation technique on glass substrates. To study the gleaming out look of the structure and surface morphological changes, the films were annealed in the temperature 350-550 ℃ for 1 h. The annealed films were subjected to X-ray diffraction (XRD) and atomic force microscopy (AFM) studies. The XRD patterns of SnO_2 thin films as-deposited and annealed at 350 ℃ illustrate that the films were amorphous, and beyond 350 ℃ and thereafter they became polycrystalline with tetragonal structure. The crystallite size of the annealed films, obtained through the XRD analysis, increased with the increasing annealing temperature, and it was found to be from 3.6 to 12 nm. The photoluminescence (PL) studies on these films were also carried out. The origin of luminescence was assigned to the defects of the nanocrystalline SnO_2 films. The Optical studies (UV-VIS) were performed and the optical band gab energy (Eg) calculations, the dependence of absorption coefficient on the photon energy at short wavelengths, were found to be increasing from 3.65 to 3.91 eV is also investigated.