机译:离子束沉积生长ZnO薄膜的退火性能的原位和异位研究
State Key Laboratory of Asic and System, Department of Microelectronics, Fudan University, 200433 Shanghai, China;
State Key Laboratory of Asic and System, Department of Microelectronics, Fudan University, 200433 Shanghai, China;
State Key Laboratory of Asic and System, Department of Microelectronics, Fudan University, 200433 Shanghai, China;
Department of Solid State Science, Ghent University,Krijgslaan 281/S1, 9000 Ghent, Belgium;
Department of Solid State Science, Ghent University,Krijgslaan 281/S1, 9000 Ghent, Belgium;
State Key Laboratory of Asic and System, Department of Microelectronics, Fudan University, 200433 Shanghai, China;
机译:离子束沉积生长ZnO薄膜的退火性能的原位和异位研究
机译:通过在Mg蒸气中化学气相沉积生长的B膜的非原位退火制得的清洁外延MgB2膜
机译:碘和碘化银真空蒸发在低温基板上生长的薄膜的原位实时光学研究:沉积和退火过程中的光谱跃迁
机译:在Si(111)和通过电子束蒸发制备的Si(111)和Ai_2O_3(0001)衬底上生长的均匀MgB_2薄膜和原位退火方法
机译:通过CVD硼薄膜的异位退火生长的超导二硼化镁薄膜中的临界电流密度的研究。
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:原位退火脉冲激光沉积生长T c≈24K的超导二硼化镁薄膜
机译:离子束作为沉积和原位表征薄膜和薄膜分层结构的手段