Synthesis, structural and electrical properties of SiC nanowires via a simple CVD method

摘要

The β-SiC nanowires (NWs) prepared by a simple carbon template method exhibit two kinds of electrical transport properties, depending on their crystalline structures. A part of the NWs exhibit the resistivities as low as 1.5 × 10~(-5) to 3 × 0~(-4) Cl cm due to n-type doping from the intrinsic planar defects and stacking faults, forming Ohmic contact with Au electrodes; the other ones show a typical characteristic of the semiconductor with a remarkable increase in resistivity by 5-7 magnitude orders, owing to a nearly perfect single-crystalline structure with few intrinsic defects. Additionally, the electrical breakdown behavior is observed in the metallic NWs.