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机译:黄铜矿Cu(In,Ga)Se_2四元合金和In靶溅射制备Cu(In,Ga)Se_2薄膜
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan;
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan;
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan;
Department of Mechatronics Engineering, National Changhua University of Education, Changhua 50007, Taiwan;
Williams Advanced Materials Technologies Taiwan Co., Ltd,Taoyuan 33857, Taiwan;
Williams Advanced Materials Technologies Taiwan Co., Ltd,Taoyuan 33857, Taiwan;
机译:黄铜矿Cu(In,Ga)Se 2 sub>四元合金和In靶溅射制备Cu(In,Ga)Se 2 sub>薄膜
机译:基于溅射四元Cu(In,Ga)Se_2靶的增加Cu(In,Ga)Se_2吸收剂晶粒尺寸的两步法
机译:四元靶溅射制备Cu(In,Ga)Se_2薄膜的电子性能与微观结构的关系
机译:通过用单铜(In,Ga)Se_2和Cu-Ga-In_2Se_3靶溅射沉积Cu(族,Ga)Se_2膜和随后的硒化程序
机译:用于太阳能电池的(Ag,Cu)(In,Ga)Se2薄膜合金系统的表征。
机译:通过共溅射和溅射气体聚集获得的CO-Cu薄膜的磁传输性能
机译:通过溅射和共蒸发沉积的Cu(In,Ga)Se_2薄膜的强度,刚度和微观结构