• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of materials science >Electromagnetic properties of Nb_2O_5 substituted ferroelectric-ferromagnetic composite ferrite
【24h】

Electromagnetic properties of Nb_2O_5 substituted ferroelectric-ferromagnetic composite ferrite

机译：Nb_2O_5取代铁电-铁磁复合铁氧体的电磁性能

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

This work presents the influence of Nb_2O_5 additions on the ferroelectric-ferromagnetic composite material. We studied the electromagnetic properties depended on Nb_2O_5 content and the sintering temperature. Results show an increasing initial permeability and a decreasing dielectric loss with the increase of Nb_2O_5 content. Quality factor has a complicated change trend with the increasing Nb_2O_5 at different sintering temperature. Increasing Nb_2O_5 content deteriorates Q factor at relatively low sintering temperature 880 °C and improve Q factor at 900 °C sintering temperature.
机译：这项工作提出了Nb_2O_5的添加对铁电-铁磁复合材料的影响。我们研究了取决于Nb_2O_5含量和烧结温度的电磁性能。结果表明，随着Nb_2O_5含量的增加，初始磁导率增加，介电损耗减小。在不同的烧结温度下，随着Nb_2O_5的增加，品质因数具有复杂的变化趋势。 Nb_2O_5含量的增加会在880°C的较低烧结温度下降低Q因子，而在900°C的烧结温度下会提高Q因子。

著录项

  • 来源
    《Journal of materials science》 |2013年第4期|1116-1120|共5页
  • 作者

    Hui Zhong; Zhanfei Xiao; Jie Yang; Xiangquan Jiao; Hualei Wang; Yu Shi;

  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号