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Chemical vapor phase polymerization deposition of layer-ordered conducting polymer nanostructure for hole injection layer

机译:用于空穴注入层的层序导电聚合物纳米结构的化学气相聚合沉积

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摘要

Layer-ordered and ultrathin films of conducting polymer poly(3,4-ethylene dioxythiophene) (PEDOT) was prepared through a chemical vapor phase polymerization method. The chemical polymerization of 3, 4-ethylenedi-oxythiophene monomer was initiated in as-prepared oxidant LB films,and PEDOT nanofilms with layer-ordered structure was constructed. UV-Vis absorption spectrum and Fourier transform infrared spectroscopy was used to confirm an interface polymerization of PEDOT in as-prepared LB films. The results of X-ray diffraction and secondary ion mass spectrometry revealed that conductive PEDOT ultrathin layers were well located at different planes of LB films. The film deposition surface pressure and chemical polymerization time of PEDOT monomer in as-prepared LB films showed distinct influence on surface morphology and conductive performance of the polymerized PEDOT LB films. This layer-ordered conducting polymer ultrathin films was deposited on ITO surface as hole injection layer for organic light-emitting diodes, and the luminescence performance of devices was improved as well.
机译:通过化学气相聚合法制备了导电聚合物聚(3,4-乙撑二氧噻吩)(PEDOT)的层序和超薄膜。在制备的氧化剂LB薄膜中引发了3,4-乙撑二氧噻吩单体的化学聚合反应,构建了具有层序结构的PEDOT纳米薄膜。使用UV-Vis吸收光谱和傅里叶变换红外光谱来确认PEDOT在制备的LB膜中的界面聚合。 X射线衍射和二次离子质谱分析的结果表明,导电PEDOT超薄层很好地位于LB膜的不同平面上。制备的LB膜中的PEDOT单体的膜沉积表面压力和化学聚合时间对聚合的PEDOT LB膜的表面形态和导电性能显示出明显的影响。该层序导电聚合物超薄膜被沉积在ITO表面上作为用于有机发光二极管的空穴注入层,并且还改善了器件的发光性能。

著录项

  • 来源
    《Journal of materials science》 |2013年第4期|1382-1388|共7页
  • 作者单位

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

    State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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