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Synthesis of phase pure iron oxide polymorphs thin films and their enhanced magnetic properties

机译:相纯氧化铁多晶型薄膜的合成及其增强的磁性能

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摘要

The α-Fe_2O_3 thin film was prepared on liquid-vapor interface at room temperature by a facile and cost effective method, which was converted to Fe_3O_4 and γ-Fe_2O_3 films by reduction and oxidation process. The morphological and structural characterizations reveal the average crystallites size in α-Fe_2O_3, Fe_3O_4 and γ-Fe_2O_3 films 12.8, 9.2 and 19 nm with rms roughness 4.35, 4.60 and 8.21 nm, respectively. From magnetic measurements, the α-Fe_2O_3 thin film shows a room temperature super-paramagnetic behavior with saturation magnetization 18 emu/cm~3, while Fe_3O_4 and γ-Fe_2O_3 thin films exhibit fer-rimagnetic behavior with saturation magnetization values 414.5 and 148 emu/cm~3, respectively. A significantly higher value of saturation magnetization is observed in α-Fe_2O_3 film, which is trusted due to the uncompensated surface spins in the film. The converted Fe_3O_4 film also shows enhanced saturation magnetization due to the reduction in antiphase boundaries, whereas the magnetization in γ-Fe_2O_3 film decreases comparatively. The magnetic property of the γ-Fe_2O_3 is explained on the basis of the Fe~(3+) ions vacancy at the octahedral position in its structure.
机译:通过一种简便而经济的方法在室温下在液-气界面上制备了α-Fe_2O_3薄膜,并通过还原和氧化工艺将其转化为Fe_3O_4和γ-Fe_2O_3薄膜。形态和结构表征揭示了α-Fe_2O_3,Fe_3O_4和γ-Fe_2O_3膜12.8、9.2和19 nm中的平均微晶尺寸,均方根粗糙度分别为4.35、4.60和8.21 nm。从磁测量结果来看,α-Fe_2O_3薄膜表现出室温下的超顺磁行为,饱和磁化强度为18 emu / cm〜3,而Fe_3O_4和γ-Fe_2O_3薄膜表现出亚铁磁行为,饱和磁化强度值为414.5和148 emu / cm厘米〜3在α-Fe_2O_3薄膜中观察到明显更高的饱和磁化强度值,这是可以相信的,这是由于薄膜中未补偿的表面自旋。转化的Fe_3O_4膜还由于反相边界的减小而表现出增强的饱和磁化强度,而γ-Fe_2O_3膜中的磁化强度相对降低。基于Fe〜(3+)离子在其八面体位置的空位来解释γ-Fe_2O_3的磁性。

著录项

  • 来源
    《Journal of materials science 》 |2014年第10期| 4553-4561| 共9页
  • 作者单位

    Jaypee University of Information Technology, Waknaghat, Solan 173234, Himachal Pradesh, India;

    Gwangju Institute of Science and Technology, Gwangju 500712, Republic of Korea;

    Jaypee University of Information Technology, Waknaghat, Solan 173234, Himachal Pradesh, India,Gwangju Institute of Science and Technology, Gwangju 500712, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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