Experimental and simulated study of electrical behaviour of ZnO film deposited on Al substrate for device applications

摘要

In this paper, zinc oxide (ZnO) film has been deposited on Al substrate by chemical wet and dry technique which is just a simple modified version of the dip coating method. In this method, it is possible to precisely control the immersion and withdrawal speed, with drying as well as annealing at the same time. The polycrystalline nature of ZnO has been confirmed by X-ray diffraction (XRD) analysis. The XRD analysis clearly indicates that some percentage of Al diffuses into the ZnO matrix at its interface region; hence it affects mobility of the sample. Hall measurement indicates the ZnO semiconductor as n-type. Ⅰ-Ⅴ characteristic of the sample shows that the contact is Ohmic and it can be used as a sensor at low potential value. The mobility decreases with increase in temperature. The simulation study carried out for I-V and mobility through simulation using ATLAS (SILVACO) software confirms that the experimental and simulation results are in close agreement with respect to the Ⅰ-Ⅴ characteristic and the mobility.